2STR1160 Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 430mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR1160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR1160 Applications
There are a lot of STMicroelectronics 2STR1160 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
