BD439 Overview
This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 800mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 300mA, 3A.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.TO-225AA is the supplier device package for this product.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD439 Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
the supplier device package of TO-225AA
BD439 Applications
There are a lot of ON Semiconductor BD439 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
