2STD1665T4 Overview
In this device, the DC current gain is 150 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 7V can achieve high levels of efficiency.The current rating of this fuse is 6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
2STD1665T4 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 380mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
2STD1665T4 Applications
There are a lot of STMicroelectronics 2STD1665T4 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
