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2N3715

2N3715

2N3715

Central Semiconductor

1 Elements 2 Terminations TO-3

SOT-23

2N3715 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-3
Published 2016
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
HTS Code8541.29.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation-Max 150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product4MHz
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage800mV
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
DC Current Gain-Min (hFE) 30
RoHS StatusRoHS Compliant
In-Stock:161 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.93000$6.93
20$6.23700$124.74
40$5.68250$227.3
100$5.12820$512.82
260$4.71238$1225.2188
500$4.29660$2148.3

2N3715 Product Details

2N3715 Overview


The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 10A volts.

2N3715 Features


a collector emitter saturation voltage of 800mV
the emitter base voltage is kept at 7V
a transition frequency of 4MHz


2N3715 Applications


There are a lot of Central Semiconductor
2N3715 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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