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2N6668

2N6668

2N6668

STMicroelectronics

2N6668 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2N6668 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation65W
Current Rating-10A
Base Part Number 2N66
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation65W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Emitter Breakdown Voltage80V
Transition Frequency 20MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 10A
VCEsat-Max 3 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:5224 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2N6668 Product Details

2N6668 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 3V.When VCE saturation is 3V @ 100mA, 10A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 10A for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 20MHz.When collector current reaches its maximum, it can reach 10A volts.

2N6668 Features


the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 20MHz

2N6668 Applications


There are a lot of STMicroelectronics 2N6668 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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