MJ11032G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 500mA, 50A.For high efficiency, the continuous collector voltage must be kept at 50A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 50A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.
MJ11032G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11032G Applications
There are a lot of ON Semiconductor MJ11032G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
