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GP2M011A090NG

GP2M011A090NG

GP2M011A090NG

SemiQ

MOSFET N-CH 900V 11A TO3PN

SOT-23

GP2M011A090NG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 416W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:2848 items

About GP2M011A090NG

The GP2M011A090NG from SemiQ is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 900V 11A TO3PN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GP2M011A090NG, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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