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R6015ENZC17

R6015ENZC17

R6015ENZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 290m Ω @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6015ENZC17 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 290m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:1573 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.002338$4.002338
10$3.775791$37.75791
100$3.562067$356.2067
500$3.360441$1680.2205
1000$3.170227$3170.227

R6015ENZC17 Product Details

R6015ENZC17 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 910pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6015ENZC17 Features


a 600V drain to source voltage (Vdss)


R6015ENZC17 Applications


There are a lot of ROHM Semiconductor
R6015ENZC17 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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