Name: RUF025N02FRATL
Brand: ROHM Semiconductor
SKU: RUF025N02FRATL
Price: 0.43000 USD
Availability: InStock

new-10%

RUF025N02FRATL

Manufacturer part number:RUF025N02FRATL

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 54m Ω @ 2.5A, 4.5V ±10V 370pF @ 10V 5nC @ 4.5V 20V 3-SMD, Flat Lead

Case Package:SOT-23

Datasheet:RUF025N02FRATL Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	800mW Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	54m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±10V
RoHS Status	ROHS3 Compliant

RUF025N02FRATL Product Details

RUF025N02FRATL Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 370pF @ 10V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.5V 4.5V).