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RQ6C050UNTR

RQ6C050UNTR

RQ6C050UNTR

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 30m Ω @ 5A, 4.5V ±10V 900pF @ 10V 12nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6

SOT-23

RQ6C050UNTR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 5A
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.038Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 20V
RoHS StatusROHS3 Compliant
In-Stock:13518 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.046035$0.046035
500$0.033849$16.9245
1000$0.028207$28.207
2000$0.025879$51.758
5000$0.024185$120.925
10000$0.022498$224.98
15000$0.021759$326.385
50000$0.021395$1069.75

RQ6C050UNTR Product Details

RQ6C050UNTR Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 900pF @ 10V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 5A.Pulsed drain current is maximum rated peak drain current 10A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).

RQ6C050UNTR Features


a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 20V drain to source voltage (Vdss)


RQ6C050UNTR Applications


There are a lot of ROHM Semiconductor
RQ6C050UNTR applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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