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IPB025N10N3GATMA1

IPB025N10N3GATMA1

IPB025N10N3GATMA1

Infineon Technologies

IPB025N10N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPB025N10N3GATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Rise Time58ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 84 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage100V
Drain-source On Resistance-Max 0.0025Ohm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:817 items

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IPB025N10N3GATMA1 Product Details

Description


The IPB025N10N3GATMA1 is a 100V N-channel Power MOSFET that provides high efficiency and high power-density SMPS solutions. This MOSFET delivers a 30 percent reduction in both RDS (on) and FOM when compared to other transistors (Figure of Merit). Within the voltage classes, the OptiMOSTM MOSFET has the lowest RDS (on) in the industry. It's perfect for high-frequency switching applications and has DC-DC converter technology built-in.



Features


● Excellent switching performance

● Environmentally-friendly

● Highest power density

● Less paralleling required

● Increased efficiency

● Smallest board-space consumption

● Easy to design



Applications


● Power Management

● Motor Drive & Control

● The Motor and A DC Source

● Industrial

● Audio


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