RQ3C150BCTB Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 33 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4800pF @ 10V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 15A.Peak drain current is 60A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (4.5V), this device contributes to a reduction in overall power consumption.
RQ3C150BCTB Features
the avalanche energy rating (Eas) is 33 mJ
based on its rated peak drain current 60A.
a 20V drain to source voltage (Vdss)
RQ3C150BCTB Applications
There are a lot of ROHM Semiconductor
RQ3C150BCTB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
