IRLR3110ZTRPBF Description
Specifically designed for Industrial applications,
this HEXFET? Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.
IRLR3110ZTRPBF Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
