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RDN100N20FU6

RDN100N20FU6

RDN100N20FU6

ROHM Semiconductor

MOSFET N-CH 200V 10A TO-220FN

SOT-23

RDN100N20FU6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature150°C TJ
PackagingBulk
Published 2006
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 360m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 543pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 10A
RoHS StatusROHS3 Compliant
In-Stock:4675 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.101819$4.101819
10$3.869641$38.69641
100$3.650604$365.0604
500$3.443966$1721.983
1000$3.249025$3249.025

About RDN100N20FU6

The RDN100N20FU6 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 10A TO-220FN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RDN100N20FU6, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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