Description
The IRF6618 combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFET? packaging to provide a package with a SO-8-sized footprint and a 0.7 mm profile that offers the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling to increase thermal transfer in power systems, improving the best thermal resistance by 80% over the prior model.
The IRF6618 minimizes switching and conduction losses by balancing low resistance, low charge, and ultra-low package inductance. This device is perfect for high-efficiency DC-DC converters that power the most recent generation of processors that operate at higher frequencies due to the decreased total losses. The IRF6618 has been optimized for synchronous buck converter performance-critical parameters such Rds(on), gate charge, and Cdv/dt-induced turn-on immunity. For synchronous FET applications, the IRF6618 delivers especially low Rds(on) and strong Cdv/dt immunity.
Features
Dual-Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Applications
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control
