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RDN080N25FU6

RDN080N25FU6

RDN080N25FU6

ROHM Semiconductor

MOSFET N-CH 250V 8A TO220FN

SOT-23

RDN080N25FU6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature150°C TJ
PackagingBulk
Published 2003
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Configuration Single
Power Dissipation-Max 35W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 543pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8A
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 250V
RoHS StatusROHS3 Compliant
In-Stock:2368 items

About RDN080N25FU6

The RDN080N25FU6 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 250V 8A TO220FN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RDN080N25FU6, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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