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NTB18N06LT4G

NTB18N06LT4G

NTB18N06LT4G

ON Semiconductor

NTB18N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTB18N06LT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating15A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 48.4W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation48.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time121ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1322 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.186556$9.186556
10$8.666563$86.66563
100$8.176003$817.6003
500$7.713210$3856.605
1000$7.276613$7276.613

NTB18N06LT4G Product Details

NTB18N06LT4G Description

NTB18N06LT4G N-channel MOSFET is based on an original, unique vertical structure. NTB18N06LT4G MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. ON Semiconductor NTB18N06LT4G is utilized in Switching applications.

NTB18N06LT4G Features

Power Motor Controls

Bridge Circuits

Converters

Power Supplies

Pb-Free Packages are Available

NTB18N06LT4G Applications

Notebook PC

Synchronous Buck for Notebook V core and Server

Notebook Battery Pack

Load Switch


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