R6530KNZC8 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 730 mJ.A device's maximal input capacitance is 2.35nF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 90A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 650V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
R6530KNZC8 Features
the avalanche energy rating (Eas) is 730 mJ
based on its rated peak drain current 90A.
a 650V drain to source voltage (Vdss)
R6530KNZC8 Applications
There are a lot of ROHM Semiconductor
R6530KNZC8 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
