IPB039N10N3 G Description
The IPB039N10N3 G is an OptiMOS? N-channel Power MOSFET offering superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPB039N10N3 G is in the TO-263-7 package with 214W power dissipation.
IPB039N10N3G Features
Excellent switching performance
World's lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
Environmentally friendly
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
IPB039N10N3G Applications
Power Management
Audio
Motor Drive & Control
Industrial
Automotive
