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R6030ENZC17

R6030ENZC17

R6030ENZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 130m Ω @ 14.5A, 10V ±20V 2100pF @ 25V 85nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6030ENZC17 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:4924 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.599121$5.599121
10$5.282190$52.8219
100$4.983198$498.3198
500$4.701130$2350.565
1000$4.435028$4435.028

R6030ENZC17 Product Details

R6030ENZC17 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2100pF @ 25V maximal input capacitance.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

R6030ENZC17 Features


a 600V drain to source voltage (Vdss)


R6030ENZC17 Applications


There are a lot of ROHM Semiconductor
R6030ENZC17 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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