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IPC218N04N3X1SA1

IPC218N04N3X1SA1

IPC218N04N3X1SA1

Infineon Technologies

MOSFET N-CH 40V 2A SAWN ON FOIL

SOT-23

IPC218N04N3X1SA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Transistor Element Material SILICON
PackagingBulk
Published 2013
Series OptiMOS™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Position UNSPECIFIED
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XXUC-N
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 200μA
Current - Continuous Drain (Id) @ 25°C 2A Tj
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain-source On Resistance-Max 0.05Ohm
DS Breakdown Voltage-Min 40V
RoHS StatusROHS3 Compliant
In-Stock:4784 items

About IPC218N04N3X1SA1

The IPC218N04N3X1SA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 40V 2A SAWN ON FOIL.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPC218N04N3X1SA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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