R5011ANX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 8.1 mJ.A device's maximum input capacitance is 1000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R5011ANX Features
the avalanche energy rating (Eas) is 8.1 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)
R5011ANX Applications
There are a lot of ROHM Semiconductor
R5011ANX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
