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RT1A050ZPTR

RT1A050ZPTR

RT1A050ZPTR

ROHM Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 26m Ω @ 5A, 4.5V ±10V 2800pF @ 6V 34nC @ 4.5V 12V 8-SMD, Flat Lead

SOT-23

RT1A050ZPTR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 96MOhm
Terminal Finish TIN COPPER
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600mW Ta
Operating ModeENHANCEMENT MODE
Power Dissipation1.25W
Turn On Delay Time12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 6V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Rise Time95ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 220 ns
Turn-Off Delay Time 410 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 20A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1663 items

Pricing & Ordering

QuantityUnit PriceExt. Price

RT1A050ZPTR Product Details

RT1A050ZPTR Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2800pF @ 6V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-12V, the drain-source breakdown voltage is -12V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 410 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to operate this transistor, a voltage of 12V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.5V 4.5V).

RT1A050ZPTR Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 410 ns
based on its rated peak drain current 20A.
a 12V drain to source voltage (Vdss)


RT1A050ZPTR Applications


There are a lot of ROHM Semiconductor
RT1A050ZPTR applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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