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QSX6TR

QSX6TR

QSX6TR

ROHM Semiconductor

QSX6TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

QSX6TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation1.25W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating1.5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number QSX
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage30V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage140mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 1.5A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3548 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.484848$1.484848
10$1.400800$14.008
100$1.321509$132.1509
500$1.246707$623.3535
1000$1.176139$1176.139

QSX6TR Product Details

QSX6TR Overview


This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 140mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 50mA, 1A.Maintaining the continuous collector voltage at 1.5A is essential for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).As you can see, the part has a transition frequency of 300MHz.As a result, it can handle voltages as low as 30V volts.A maximum collector current of 1.5A volts can be achieved.

QSX6TR Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz

QSX6TR Applications


There are a lot of ROHM Semiconductor QSX6TR applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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