2SA1576AT106Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.A -150mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.This device can take an input voltage of 50V volts before it breaks down.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.Maximum collector currents can be below 150mA volts.
2SA1576AT106Q Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz
2SA1576AT106Q Applications
There are a lot of ROHM Semiconductor 2SA1576AT106Q applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
