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ZXTP25100BFHTA

ZXTP25100BFHTA

ZXTP25100BFHTA

Diodes Incorporated

ZXTP25100BFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25100BFHTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 7.994566mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Max Power Dissipation1.81W
Current Rating-2A
Frequency 200MHz
Base Part Number ZXTP25100B
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation1.81W
Power - Max 1.25W
Gain Bandwidth Product200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 295mV @ 200mA, 2A
Collector Emitter Breakdown Voltage100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Max Frequency 200MHz
Collector Emitter Saturation Voltage-215mV
Max Breakdown Voltage 100V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) -7V
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14432 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.052793$0.052793
500$0.038819$19.4095
1000$0.032349$32.349
2000$0.029677$59.354
5000$0.027736$138.68
10000$0.025801$258.01
15000$0.024953$374.295
50000$0.024536$1226.8

ZXTP25100BFHTA Product Details

ZXTP25100BFHTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 2V DC current gain.A collector emitter saturation voltage of -215mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 295mV @ 200mA, 2A.An emitter's base voltage can be kept at -7V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A breakdown input voltage of 100V volts can be used.Product comes in SOT-23-3 supplier package.The device has a 100V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 2A volts can be achieved.

ZXTP25100BFHTA Features


the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -215mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
the supplier device package of SOT-23-3

ZXTP25100BFHTA Applications


There are a lot of Diodes Incorporated ZXTP25100BFHTA applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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