2SCR542F3TR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 50mA, 1A.The part has a transition frequency of 250MHz.The device exhibits a collector-emitter breakdown at 30V.
2SCR542F3TR Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 200mV @ 50mA, 1A
a transition frequency of 250MHz
2SCR542F3TR Applications
There are a lot of ROHM Semiconductor 2SCR542F3TR applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
