MMBT3906WT1G Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 250MHz.Breakdown input voltage is 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906WT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906WT1G Applications
There are a lot of ON Semiconductor MMBT3906WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
