2SCR522EBTL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 120mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of 200mA should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As a result, the part has a transition frequency of 400MHz.A breakdown input voltage of 20V volts can be used.The maximum collector current is 200mA volts.
2SCR522EBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522EBTL Applications
There are a lot of ROHM Semiconductor 2SCR522EBTL applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
