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2SCR293PT100

2SCR293PT100

2SCR293PT100

ROHM Semiconductor

2SCR293PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR293PT100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2013
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product320MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage30V
Current - Collector (Ic) (Max) 1A
Transition Frequency 320MHz
Collector Emitter Saturation Voltage120mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1941 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.220136$0.220136
10$0.207675$2.07675
100$0.195920$19.592
500$0.184830$92.415
1000$0.174368$174.368

2SCR293PT100 Product Details

2SCR293PT100 Overview


DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 120mV.A VCE saturation (Max) of 350mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 320MHz.The maximum collector current is 1A volts.

2SCR293PT100 Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz

2SCR293PT100 Applications


There are a lot of ROHM Semiconductor 2SCR293PT100 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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