2SCR293PT100 Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 120mV.A VCE saturation (Max) of 350mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 320MHz.The maximum collector current is 1A volts.
2SCR293PT100 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR293PT100 Applications
There are a lot of ROHM Semiconductor 2SCR293PT100 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter