BFN26E6433HTMA1 Overview
This device has a DC current gain of 30 @ 30mA 10V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.When collector current reaches its maximum, it can reach 200mA volts.
BFN26E6433HTMA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
BFN26E6433HTMA1 Applications
There are a lot of Infineon Technologies BFN26E6433HTMA1 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
