2SC5865TLQ Overview
In this device, the DC current gain is 120 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 250MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SC5865TLQ Features
the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 250MHz
2SC5865TLQ Applications
There are a lot of ROHM Semiconductor 2SC5865TLQ applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
