NJD35N04G Overview
In this device, the DC current gain is 2000 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 20mA, 2A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.As you can see, the part has a transition frequency of 90MHz.As a result, it can handle voltages as low as 350V volts.The maximum collector current is 4A volts.
NJD35N04G Features
the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 90MHz
NJD35N04G Applications
There are a lot of ON Semiconductor NJD35N04G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
