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2SC4672T100P

2SC4672T100P

2SC4672T100P

ROHM Semiconductor

2SC4672T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4672T100P Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation500mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating3A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4672
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product210MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 210MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 82
VCEsat-Max 0.35 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3317 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.060640$0.06064
500$0.044588$22.294
1000$0.037157$37.157
2000$0.034089$68.178
5000$0.031859$159.295
10000$0.029636$296.36
15000$0.028662$429.93
50000$0.028182$1409.1

2SC4672T100P Product Details

2SC4672T100P Overview


DC current gain in this device equals 82 @ 500mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 350mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 210MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

2SC4672T100P Features


the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 210MHz

2SC4672T100P Applications


There are a lot of ROHM Semiconductor 2SC4672T100P applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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