2SA933ASTPR Overview
This device has a DC current gain of 180 @ 1mA 6V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Emitter base voltages of -6V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -150mA for this device.The part has a transition frequency of 140MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Device displays Collector Emitter Breakdown (50V maximal voltage).During maximum operation, collector current can be as low as 150mA volts.
2SA933ASTPR Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz
2SA933ASTPR Applications
There are a lot of ROHM Semiconductor 2SA933ASTPR applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
