JANTXV2N2369A Overview
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.In the part, the transition frequency is 500MHz.
JANTXV2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JANTXV2N2369A Applications
There are a lot of Microsemi Corporation JANTXV2N2369A applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
