PN2222ANLBU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.As a result, the part has a transition frequency of 300MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
PN2222ANLBU Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
PN2222ANLBU Applications
There are a lot of Rochester Electronics, LLC PN2222ANLBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
