2SC5706-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 160mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 240mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.There is a transition frequency of 400MHz in the part.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2SC5706-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-H Applications
There are a lot of ON Semiconductor 2SC5706-H applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
