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NVMD6N03R2G

NVMD6N03R2G

NVMD6N03R2G

Rochester Electronics, LLC

N-CHANNEL POWER MOSFET

SOT-23

NVMD6N03R2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.29W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C 6A
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 30V
FET Feature Logic Level Gate
RoHS StatusROHS3 Compliant
In-Stock:29349 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.28000$0.28
500$0.2772$138.6
1000$0.2744$274.4
1500$0.2716$407.4
2000$0.2688$537.6
2500$0.266$665

About NVMD6N03R2G

The NVMD6N03R2G from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features N-CHANNEL POWER MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NVMD6N03R2G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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