FDMS3660S Description
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous synchronous FET (Q2) are designed to provide optimal power efficiency.
FDMS3660S Features
Q1: N?Channel
? Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
? Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A
Q2: N?Channel
? Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A
? Max rDS(on) = 2.2 m at VGS = 4.5 V, ID = 27 A
? Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
? MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
? These Devices are Pb?Free and are RoHS Compliant
FDMS3660S Applications
? Computing
? Communications
? General Purpose Point of Load
? Notebook VCORE
