KSB1366G Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 2A.As you can see, the part has a transition frequency of 9MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
KSB1366G Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
a transition frequency of 9MHz
KSB1366G Applications
There are a lot of Rochester Electronics, LLC KSB1366G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
