US6T4TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 500mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 280MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
US6T4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6T4TR Applications
There are a lot of ROHM Semiconductor US6T4TR applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
