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IRFR2407PBF

IRFR2407PBF

IRFR2407PBF

Rochester Electronics, LLC

HEXFET N-CHANNEL POWER MOSFET

SOT-23

IRFR2407PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature-55°C~175°C TJ
PackagingTube
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2.4pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4890 items

About IRFR2407PBF

The IRFR2407PBF from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features HEXFET N-CHANNEL POWER MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFR2407PBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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