Name: HAT2256RWS-E
Brand: Renesas Electronics America
SKU: HAT2256RWS-E
Availability: InStock

new-10%

HAT2256RWS-E

Manufacturer part number:HAT2256RWS-E

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 30m Ω @ 4A, 10V ±20V 1210pF @ 10V 10nC @ 4.5V 60V 8-SOIC (0.154, 3.90mm Width)

Case Package:SOT-23

Datasheet:HAT2256RWS-E Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	30m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1210pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V

HAT2256RWS-E Product Details

HAT2256RWS-E Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1210pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.