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FSBCW30

FSBCW30

FSBCW30

Rochester Electronics, LLC

FSBCW30 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

FSBCW30 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 215 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 500mA
RoHS StatusROHS3 Compliant
In-Stock:1216 items

FSBCW30 Product Details

FSBCW30 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 215 @ 2mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 32V maximum voltage - Collector Emitter Breakdown.

FSBCW30 Features


the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA

FSBCW30 Applications


There are a lot of Rochester Electronics, LLC FSBCW30 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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