2N5401G Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In the part, the transition frequency is 100MHz.Maximum collector currents can be below 600mA volts.
2N5401G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401G Applications
There are a lot of ON Semiconductor 2N5401G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
