Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SC4134S-E

2SC4134S-E

2SC4134S-E

Rochester Electronics, LLC

2SC4134S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SC4134S-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Operating Temperature150°C TJ
PackagingBulk
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 120MHz
RoHS StatusROHS3 Compliant
In-Stock:29599 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2SC4134S-E Product Details

2SC4134S-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 100mA 5V.A VCE saturation (Max) of 400mV @ 40mA, 400mA means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.The device has a 100V maximal voltage - Collector Emitter Breakdown.

2SC4134S-E Features


the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 400mA
the supplier device package of TP

2SC4134S-E Applications


There are a lot of Rochester Electronics, LLC 2SC4134S-E applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News