2N5550TAR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 100MHz.Breakdown input voltage is 140V volts.The maximum collector current is 600mA volts.
2N5550TAR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TAR Applications
There are a lot of ON Semiconductor 2N5550TAR applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
