HIP6601BECBZ Overview
A higher degree of flexibility is achieved by adopting its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.Tube is the form of the package.This device is equipped with 2 drivers for its configuration.In this case, gate drivers is mounted along the way of Surface Mount.In the absence of a power supply voltage of 10.8V~13.2V V, it is able to demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.This device is allowed to operate in a temperature range of 0°C~125°C TJ.Non-Inverting is the input type used in this program.As a result of its configuration, it contains a maximum of 8 terminations.There are various parts that can be found under its base part number HIP6601B.The device is specifically designed to operate at 12V volts.There can be a voltage up to 15V on the high-side (Bootstrap).
HIP6601BECBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V
HIP6601BECBZ Applications
There are a lot of Renesas Electronics America Inc. HIP6601BECBZ gate drivers applications.
- Solar power supplies
- Portable computers
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Topologies
- Smart Phones
- Isolated Supplies for controller area network (CAN),
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Industrial Motor Inverter - Power Tools, Robotics
- Line drivers
- Multicolor LED/laser displays
