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71256L35TDB

71256L35TDB

71256L35TDB

Renesas Electronics America Inc.

Memory IC

SOT-23

71256L35TDB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.300, 7.62mm)
Operating Temperature-55°C~125°C TA
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size256Kb 32K x 8
Memory TypeVolatile
Memory Format SRAM
Memory InterfaceParallel
Write Cycle Time - Word, Page 35ns
RoHS StatusROHS3 Compliant
In-Stock:289 items

Pricing & Ordering

QuantityUnit PriceExt. Price
130$22.52877$2928.7401

71256L35TDB Product Details

71256L35TDB Overview


There is a Volatile memory type associated with this device. There is a Tube case available. 28-CDIP (0.300, 7.62mm) case encloses it. Memory size on the chip is 256Kb 32K x 8. There is a mainstream memory format used by this device, which is called SRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -55°C~125°C TA. A supply voltage of 4.5V~5.5V can be applied to it. The recommended mounting type for this device is Through Hole.

71256L35TDB Features


Package / Case: 28-CDIP (0.300, 7.62mm)

71256L35TDB Applications


There are a lot of Renesas Electronics America Inc. 71256L35TDB Memory applications.

  • eDRAM
  • data buffer
  • telecommunications
  • DVD disk buffer
  • cell phones
  • workstations,
  • servers
  • Cache memory
  • embedded logic
  • nonvolatile BIOS memory

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